IPD088N06N3 G
Manufacturer:
Infineon
Mfr.Part #:
IPD088N06N3 G
Datasheet:
Description:
MOSFETs PG-TO252-3 SMD/SMT N-Channel number of channels:1 71 W 60 V Continuous Drain Current (ID):50 A 48 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Halogen Free | Not Halogen Free |
| Lead Free | Contains Lead |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 71 W |
| Power Dissipation | 71 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 2.9 nF |
| Continuous Drain Current (ID) | 50 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 20 ns |
| Rise Time | 40 ns |
| Gate Charge | 48 nC |
| Drain to Source Resistance | 7.1 mΩ |
| Max Dual Supply Voltage | 60 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| On-State Resistance | 8.8 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 2500 |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
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